Title :
A 4-Mb MRAM macro comprising shared write-selection transistor cells and using a leakage-replication read scheme
Author :
Nebashi, Ryusuke ; Sakimura, Noboru ; Sugibayashi, Tadahiko ; Kasai, Naoki
Author_Institution :
NEC Corp., Sagamihara
Abstract :
We propose an MRAM macro architecture for SoCs to reduce their area size. The .shared write-selection transistor (SWST) architecture is based on 2T1MTJ MRAM cell technology´, which enables the same fast access time as and with smaller cell area than that of 6T SRAMs. We designed a 4-Mb macro using the SWST architecture with a 0.15-mum CMOS process and a 0.24-mum MRAM process. The macro cell array consists of 81T64MTJ cell array elements, each storing 64 hits of data. Area size is reduced by more than 30%. By introducing a leakage-replication (LR) read scheme, 50-ns access time is achieved with SPICE simulation. The 2T1MTJ macro and 81T64MTJ macro can be integrated into a single SoC.
Keywords :
CMOS memory circuits; random-access storage; system-on-chip; 2T1MTJ cell technology; 81T64MTJ cell array; CMOS process; MRAM macro architecture; SPICE simulation; SoC; leakage-replication read scheme; macro cell array; magnetic random access memory; shared write-selection transistor cells; size 0.15 mum; size 0.24 mum; storage capacity 4 Mbit; CMOS process; CMOS technology; Character generation; Laboratories; National electric code; Nonvolatile memory; Random access memory; SPICE; Solid state circuits; Writing;
Conference_Titel :
Solid-State Circuits Conference, 2007. ASSCC '07. IEEE Asian
Conference_Location :
Jeju
Print_ISBN :
978-1-4244-1359-1
Electronic_ISBN :
978-1-4244-1360-7
DOI :
10.1109/ASSCC.2007.4425770