Title :
TiN production and performance as a barrier layer in ULSI technology
Author :
Kim, W.J. ; Kim, B.J. ; Lee, C.J. ; Harra, David J.
Author_Institution :
Samsung Electron., Ki-Hung, South Korea
Abstract :
Information is presented on reactively sputter-deposited TiN films used as a barrier layer in the production of ULSI-level DRAMS. Titanium, TiN, and aluminium step coverage data are shown for ULSI level topology. Standby current and junction leakage current data are presented for device structures as a function of air exposure of the TiN films before subsequent aluminium deposition and post TiN deposition anneal treatments. Improvements in reactive sputter deposition equipment for production of TiN films, various methods reported in the literature, and the mechanisms operative in the production of reactively sputtered TiN are discussed. Issues related to steady-state production of ULSI semiconductor devices using TiN are described. Techniques for reducing particulate generation in the TiN deposition module are discussed, and TiN particulate data are presented
Keywords :
DRAM chips; VLSI; integrated circuit technology; metallisation; sputter deposition; titanium compounds; Al step coverage; Ti step coverage; TiN particulate data; TiN step coverage; TiN-Al-TiN; ULSI DRAM; ULSI technology; air exposure; anneal treatments; junction leakage current data; particulate reduction techniques; reactive sputter deposition equipment; reactively sputter-deposited TiN films; standby current data; steady-state production; Aluminum; Annealing; Leakage current; Production; Random access memory; Semiconductor films; Tin; Titanium; Topology; Ultra large scale integration;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127930
