• DocumentCode
    270854
  • Title

    Low Voltage Power Efficient Tunable Shaper Circuit With Rail-To-Rail Output Range for the HYDE Detector at FAIR

  • Author

    Galán, J. ; López-Ahumada, R. ; Sánchez-Rodríguez, T. ; Torralba, Antonio ; Carvajal, R.G. ; Martel, I.

  • Author_Institution
    Dept. of Electron. Eng., Comput. Syst. & Automatics, Univ. of Huelva, Huelva, Spain
  • Volume
    61
  • Issue
    2
  • fYear
    2014
  • fDate
    Apr-14
  • Firstpage
    844
  • Lastpage
    851
  • Abstract
    This paper presents a low voltage, low power readout front-end system implemented in 130 nm CMOS technology. A conventional architecture that consists of charge sensitive amplifier, pole/zero cancellation and shaper has been used. The work focuses on the design of novel circuit topologies in low voltage environment minimizing the power consumption in modern deep submicron CMOS technologies. An operational amplifier with rail-to-rail output swing that uses a gain boosting technique and class-AB output stage without extra power consumption has been used for the shaper. The circuit combines excellent performances with simplicity of design and suitability for low voltage operation. The system is intended to work with silicon detectors for nuclear physics applications and is optimized to match an input capacitance of 10 pF. The system features a peaking time of 500 ns, a power dissipation of 1.57 mW/channel and an equivalent noise charge of 201 e-.
  • Keywords
    CMOS integrated circuits; amplifiers; nuclear electronics; readout electronics; silicon radiation detectors; CMOS technology; charge sensitive amplifier; circuit topology design; class-AB output stage; equivalent noise charge; low power readout front-end system; operational amplifier; pole/zero cancellation; power consumption; power dissipation; rail-to-rail output range; silicon detectors; size 130 nm; Detectors; Gain; Mirrors; Noise; Power demand; Topology; Transistors; Current efficiency; deep submicron CMOS technology; front-end electronics; gain boosting techniques; silicon detectors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2014.2302008
  • Filename
    6755577