Very Compact High-gain Broadband Low-noise Amplifier in InP HEMT Technology

Author

Masuda, Satoshi ; Ohki, Toshihiro ; Hirose, Tatsuya

Author_Institution

Fujitsu Labs. Ltd., Atsugi

fYear

2006

fDate

11-16 June 2006

Firstpage

77

Lastpage

80

Abstract

We successfully developed an InP high electron mobility transistor (HEMT) low-noise amplifier (LNA) using multi-layer transmission lines. The fabricated five-stage LNA achieved a 43 dB gain with a noise figure (NF) of 1.9 dB at 23 GHz and a gain of more than 40 dB from 18 to 43 GHz. The maximum gain was 49.5 dB at 32 GHz and the chip size was only 1.8 times 0.9 mm², resulting in a gain density of 30.5 dB/mm². To the best of our knowledge, this gain density is the highest performance in any Ka-band LNA reported to date. In addition, the design accuracy of the LNA was also demonstrated

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; indium compounds; low noise amplifiers; transmission lines; wideband amplifiers; 1.9 dB; 18 to 43 GHz; 43 dB; 49.5 dB; InP; Ka-band amplifier; broadband low-noise amplifier; compact high-gain amplifier; gain density; high electron mobility transistor; multilayer transmission lines; Digital circuits; Frequency; Gain; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; Microstrip; Nonhomogeneous media; Semiconductor materials; InP HEMT; gain density; low-noise amplifier; multi-layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249932

Filename

4014823