Title :
Full Ka-band High Performance InP MMIC LNA Module
Author :
Tang, Yu-Lung ; Wadefalk, Niklas ; Morgan, Matthew A. ; Weinreb, Sander
Author_Institution :
California Inst. of Technol., Pasadena, CA
Abstract :
A 0.1-mum InP HEMT Ka-band LNA with high and flat gain, very low noise figure and low VSWR has been developed. Across the entire Ka-band, of 26 GHz to 40 GHz, the MMIC LNA demonstrated associated gain of 21.9 plusmn 0.9 dB and an average noise figure of 1.5 dB with a minimum of 1.3 dB at 34 GHz. The LNA chip was cryogenically cooled to 12 K where it exhibited an associated gain of 23.0 plusmn 1.1 dB and an average noise temperature of 15.5 K, i.e. 0.23-dB noise figure. Two LNA chips were cascaded and assembled into a module. At room temperature, the module achieved an associated gain of 37.6 dB plusmn 1.8 dB and an average noise figure of 1.3 dB. At 15 K, the average noise temperature was improved to 11.4 K with 41.0 plusmn 2.4 dB associated gain
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; cryogenics; indium compounds; low noise amplifiers; 0.23 dB; 1.3 to 1.5 dB; 11.4 to 15.5 K; 26 to 40 GHz; InP; Ka-band amplifier; MMIC amplifiers; cryogenics; high electron mobility transistor; low noise amplifiers; Cooling; Cryogenics; Frequency; HEMTs; Indium phosphide; MMICs; Noise figure; Performance gain; Radio astronomy; Temperature; InP-based HEMT; LNA; MMIC; cryogenic; low noise amplifier;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249933