Random GaAs IC´s ESD failures caused by RF test handler

Author

Anand, Y. ; Crowe, Dana ; Feinberg, Alec ; Jones, Chris

Author_Institution

M/A-COM Inc., Lowell, MA, USA

fYear

2000

fDate

26-28 Sept. 2000

Firstpage

387

Lastpage

393

Abstract

This paper describes a case study of GaAs IC ESD failures caused in a RF test handler. The test handler caused yield problems compared with another tester. A small insulator inside the test fixture assembly was found to generate up to 200 volt ESD pulses, causing sporadic device failures. This problem was resolved by replacing the insulator with a piece of static dissipative material. In this paper, we present tester investigation and evaluation, material investigation, experimental results, and conclusions from production follow-up.

Keywords

III-V semiconductors; MMIC; electrostatic discharge; failure analysis; gallium arsenide; insulator testing; integrated circuit testing; integrated circuit yield; materials handling; production testing; test equipment; 200 V; ESD pulse generation; GaAs; GaAs IC ESD failures; IC yield; RF test handler; insulator; insulator replacement; material investigation; random GaAs IC ESD failures; sporadic device failures; static dissipative material; test fixture assembly; tester investigation; Assembly; Electrostatic discharge; Fixtures; Gallium arsenide; Insulation; Insulator testing; Integrated circuit testing; Pulse generation; Radio frequency; Radiofrequency integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-58537-018-5

Type

conf

DOI

10.1109/EOSESD.2000.890107

Filename

890107