Title :
Experimental Study of Defect Formations in GaAs Devices Using Gain, Photoluminescence and Deep Level Transient Spectroscopy
Author :
Bielejec, Edward ; Vizkelethy, Gyorgy ; Fleming, R.M. ; Serkland, Darwin K. ; McDonald, J.K. ; Patrizi, Gary A. ; King, D.B.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
We present an experimental methodology developed to probe the clustered defect formation in GaAs devices under both neutron and ion irradiations. The strengths, limitations, and path forward to gather structural defect information will be addressed.
Keywords :
III-V semiconductors; crystal defects; deep level transient spectroscopy; gallium arsenide; ion beam effects; neutron effects; photoluminescence; semiconductor devices; GaAs; deep level transient spectroscopy; gain spectroscopy; gallium arsenide devices; ion irradiation; neutron irradiation; photoluminescence spectroscopy; structural defect information; Gallium arsenide; Laboratories; Neutrons; Photoluminescence; Probes; Radiation effects; Silicon; Ion radiation effects; radiation effects; semiconductor devices;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2230646
