• DocumentCode
    2708614
  • Title

    A high S/N ratio and high full well capacity CMOS image sensor with active pixel readout feedback operation

  • Author

    Lee, Woonghee ; Akahane, Nana ; Adachi, Satoru ; Mizobuchi, Koichi ; Sugawa, Shigetoshi

  • Author_Institution
    Tohoku Univ., Sendai
  • fYear
    2007
  • fDate
    12-14 Nov. 2007
  • Firstpage
    260
  • Lastpage
    263
  • Abstract
    We discuss results of the design and operations of a CMOS image sensor with high S/N ratio while keeping wide dynamic range. Readout gains and input-referred noises of the image sensor are improved by actively using a pixel source follower feedback operation. A 1/4-inch 5.6 mum times 5.6 mum pixel VGA color CMOS image sensor with a lateral overflow integration capacitor in pixel in a 0.18 mum 2P3M CMOS process achieves about 1.7 times the gain compared with the case where the feedback operation is not positively used, resulting in a high input-referred conversion gain exceeded 200 muV/e-, a low input-referred noise below 2 e- without column amplifier and a high full well capacity of about 1.3 times 105 e-.
  • Keywords
    CMOS image sensors; 2P3M CMOS process; VGA color CMOS image sensor; active pixel readout feedback operation; high S/N ratio; high full well capacity CMOS image sensor; lateral overflow integration capacitor; pixel source follower feedback operation; size 0.18 micron; CMOS image sensors; CMOS process; Capacitors; Color; Colored noise; Dynamic range; Feedback; Image converters; Image sensors; Pixel;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2007. ASSCC '07. IEEE Asian
  • Conference_Location
    Jeju
  • Print_ISBN
    978-1-4244-1359-1
  • Electronic_ISBN
    978-1-4244-1360-7
  • Type

    conf

  • DOI
    10.1109/ASSCC.2007.4425780
  • Filename
    4425780