Electrothermal modeling of ESD diodes in bulk-Si and SOI technologies

Author

Wang, Yu ; Juliano, Patrick ; Joshi, Sopan ; Rosenbaum, Elyse

Author_Institution

Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA

fYear

2000

fDate

26-28 Sept. 2000

Firstpage

430

Lastpage

436

Abstract

An electrothermal diode model intended for implementation in a SPICE-like simulator is presented. The model is valid in the high current, forward-bias and reverse-breakdown regimes where diodes operate during ESD events. We also present a procedure for extracting the temperature of an SOI diode from an I-V measurement.

Keywords

SPICE; electric current; electrostatic discharge; elemental semiconductors; protection; semiconductor device breakdown; semiconductor device models; semiconductor diodes; silicon; silicon-on-insulator; thermal analysis; ESD diodes; ESD events; I-V measurement; SOI diode; SOI technology; SPICE-like simulator; Si; Si-SiO/sub 2/; bulk-Si technology; electrothermal diode model; electrothermal modeling; forward-bias regime; high current regime; reverse-breakdown regime; temperature extraction procedure; Circuit simulation; Computational modeling; Computer simulation; Contact resistance; Electric breakdown; Electrostatic discharge; Electrothermal effects; Neodymium; Resistors; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-58537-018-5

Type

conf

DOI

10.1109/EOSESD.2000.890112

Filename

890112