Title :
A scalable analytical model for the ESD N-well resistor
Author :
Puvvada, Venugopal ; Srinivasan, Venkatesh ; Gupta, Vishal
Author_Institution :
Texas Instrum. (India) Ltd., Bangalore, India
Abstract :
We have proposed a simple analytical model for the N-well resistor up to the turnover point in the I-V characteristic of the device. A simple and accurate method of extraction of the parameters used on which this model is based has also been proposed. Furthermore, the scalability of these parameters has also been studied. The model and its scalability have been verified with experimental data.
Keywords :
electric current; electrostatic discharge; protection; resistors; semiconductor device models; ESD N-well resistor; ESD protection; N-well resistor; device I-V characteristic turnover point; model parameter extraction; model scalability; model verification; parameter scalability; scalable analytical model; Analytical models; Anodes; Circuit simulation; Data mining; Electrostatic discharge; Medical simulation; Resistors; Scalability; Semiconductor process modeling; Voltage;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-58537-018-5
DOI :
10.1109/EOSESD.2000.890113
