DocumentCode :
2708776
Title :
Analog design challenges in nanometer CMOS technologies
Author :
Sansen, Willy
Author_Institution :
KULeuven, Leuven
fYear :
2007
fDate :
12-14 Nov. 2007
Firstpage :
5
Lastpage :
9
Abstract :
This paper provides a review of all important effects in nm CMOS technologies, with 1 volt supply voltages. They are the reduction of the transconduction, the increase of the gate current, the noise and the mismatch. It is followed by an overview of amplifiers/filters configurations with both Gate and Bulk drives. A large number of sub-1 volt circuits are then provided for sake of illustration, including sigma-delta modulators.
Keywords :
CMOS analogue integrated circuits; filters; integrated circuit design; nanoelectronics; operational amplifiers; sigma-delta modulation; amplifiers-filters configurations; analog design challenges; gate current; nanometer CMOS technologies; sigma-delta modulators; transconduction reduction; voltage 1 V; Analog circuits; Boosting; CMOS analog integrated circuits; CMOS technology; Circuit noise; Filters; Noise cancellation; Operational amplifiers; Threshold voltage; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2007. ASSCC '07. IEEE Asian
Conference_Location :
Jeju
Print_ISBN :
978-1-4244-1359-1
Electronic_ISBN :
978-1-4244-1360-7
Type :
conf
DOI :
10.1109/ASSCC.2007.4425792
Filename :
4425792
Link To Document :
بازگشت