Simulated Performance of SiC Based OP-AMP at High Temperature

Author

Jeesung Jung ; Huang, Alex Q. ; Zhong Du

Author_Institution

Semicond. Power Electron. Center, North Carolina State Univ., Raleigh, NC

fYear

2006

fDate

18-22 June 2006

Firstpage

1

Lastpage

5

Abstract

Silicon carbide (SiC) is significantly superior to silicon for high power and high temperature applications. However, currently SiC devices are suffering from some imperfect material properties, such as low channel mobility which results the low transconductance from the circuit design point of view. The possibility of a SiC analog integrated circuit is investigated by comparing analog circuit design parameters between the SiC and Si FET two-stage Op-Amps with temperature variation

Keywords

JFET integrated circuits; analogue integrated circuits; high-temperature electronics; integrated circuit design; operational amplifiers; silicon compounds; wide band gap semiconductors; FET two-stage Op-Amps; SiC; analog integrated circuit design parameters; channel mobility; high temperature applications; silicon carbide; Analog circuits; Analog integrated circuits; Circuit simulation; Circuit synthesis; FETs; Material properties; Operational amplifiers; Silicon carbide; Temperature; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2006. PESC '06. 37th IEEE

Conference_Location

Jeju

ISSN

0275-9306

Print_ISBN

0-7803-9716-9

Type

conf

DOI

10.1109/PESC.2006.1711752

Filename

1711752