Title :
Spin related effect in Terahertz photovoltaic response of Si-MOSFETs
Author :
Videlier, H. ; Dyakonova, N. ; Teppe, F. ; Consejo, C. ; Knap, W. ; Lusakowski, J. ; Tomaszewski, D. ; Marczewski, J. ; Grabiec, P.
Author_Institution :
GES, Univ. Montpellier 2, Montpellier, France
Abstract :
We report on investigations of photovoltaic response of Si-MOSFETs subjected to Terahertz radiation in high magnetic fields. The MOSFETs develop a dc drain-to-source voltage that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bounded to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.
Keywords :
MOSFET; carrier density; elemental semiconductors; paramagnetic resonance; photovoltaic effects; silicon; terahertz wave detectors; MOSFETs; Si; dc drain-to-source voltage; dopants; paramagnetic resonance; photovoltaic signal generation; spin related effect; spin transitions; terahertz photovoltaic response; two-dimensional carrier density; Logic gates; Magnetic fields; Photovoltaic systems; Plasma temperature; Silicon; Transistors;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612411
