• DocumentCode
    2709741
  • Title

    Continuous wave Terahertz photomixer from low temperature grown GaAs with high carrier mobility

  • Author

    Tanoto, H. ; Wu, Q.Y. ; Teng, J.H. ; Sun, M. ; Chen, Z.N. ; Htoo, T. ; Chua, S.J. ; Lampin, J.F. ; Gokarna, A. ; Dogheche, E.

  • Author_Institution
    Inst. of Mater. Res. & Eng., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore
  • fYear
    2010
  • fDate
    5-10 Sept. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Low temperature GaAs grown by an MBE system exhibiting Hall carrier mobility of 5000 cm2/v.s. is fabricated into continuous-wave (CW) Terahertz (THz) photomixers utilizing a dual-dipole antenna with an interdigitated feed structure. The characteristics of the CW THz photomixer are presented.
  • Keywords
    III-V semiconductors; antenna feeds; carrier mobility; dipole antennas; gallium compounds; mixers (circuits); terahertz wave devices; wide band gap semiconductors; CW THz photomixer; GaAs; Hall carrier mobility; MBE system; continuous wave terahertz photomixer; dual dipole antenna; interdigitated feed structure; Bolometers; Gallium arsenide; Optical pumping; Stimulated emission; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-6655-9
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5612417
  • Filename
    5612417
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2709741