Title :
An RF Chipset for Impulse Radio UWB Using 0.13 μm InP-HEMT Technology
Author :
Kawano, Yoshihiro ; Nakasha, Yasuhiro ; Yokoo, K. ; Masuda, Shin ; Takahashi, Tsuyoshi ; Hirose, Tatsuya ; Oishi, Yasuyuki ; Hamaguchi, Kiyoshi
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa
Abstract :
A novel ultra wideband impulse radio architecture for 24 GHz-band short-range radar was developed using 0.13 mum InP-HEMT technology. The transmitter part generates an extremely wide band impulse from a pulse generator and then filters it by using a band pass filter (BPF). The obtained impulse shows a bandwidth of over 40 GHz and achieves flatness in the target band. The power amplifier (PA) for the transmitter has a gain of 15 plusmn 0.05 dB, and the low noise amplifier (LNA) for the receiver has a gain of 40 plusmn 1 dB. The achieved flatness of the integration gain including the PA, LNA, and RF-switch is less than plusmn 1.1 dB. These RF circuits with gain flatness make possible a simple matched filter configuration without the use of a conventional correlator composed of a local oscillator
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; band-pass filters; indium compounds; low noise amplifiers; power amplifiers; pulse generators; transceivers; ultra wideband communication; ultra wideband radar; 0.13 micron; 24 GHz; InP; RF-switch; band pass filter; high electron mobility transistors; local oscillator; low noise amplifier; power amplifier; pulse generator; short-range radar; transceivers; ultra wideband impulse radio; Band pass filters; Bandwidth; Low-noise amplifiers; Pulse amplifiers; Pulse generation; Radio frequency; Radio transmitters; Radiofrequency amplifiers; Ultra wideband radar; Ultra wideband technology;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249514