Title :
Reviews and prospects of high-density RAM technology
Author :
Itoh, Kiyoo ; Watanabe, Takao ; Kimura, Shin Ichiro ; Sakata, Takeshi
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
We review memory-chip and memory-cell developments of various VLSI memories over the last three decades, trends in DRAM technology (such as power-supply schemes and gate oxide thickness compared with those of MPUs, memory-cell structures and multi-divided arrays for modern DRAMs), state-of-the art embedded DRAM technology for high-speed, low-cost and low-voltage designs, and prospects for emerging RAMs such as FeRAMs and MRAMs
Keywords :
VLSI; integrated circuit technology; random-access storage; FeRAM; MRAM; VLSI memory; embedded DRAM technology; gate oxide thickness; high-density RAM technology; high-speed design; low-cost design; low-voltage design; memory cell; memory chip; multi-divided array; power supply voltage; Costs; Ferroelectric films; Nonvolatile memory; Power supplies; Random access memory; Read-write memory; Research and development; Standards development; Very large scale integration; Voltage;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890184
