DocumentCode
2709894
Title
Electrical properties of nanocrystalline porous silicon
Author
Ciurea, M.L. ; Iancu, V.
Author_Institution
Nat. Inst. of Mater. Phys., Bucharest-Magurele, Romania
Volume
1
fYear
2000
fDate
2000
Firstpage
55
Abstract
Conduction properties as well as trapping phenomena in nanocrystalline porous silicon films are investigated in relation to their microstructure. Theoretical models to describe the phenomena are proposed. The main results presented in this paper are: the two-scale porosity of our porous silicon films, the decisive role of the quantum confinement to the conduction phenomena and the prominent part played by the oxidation on the surface effects
Keywords
electrical conductivity; elemental semiconductors; nanostructured materials; porous semiconductors; semiconductor thin films; silicon; Si; carrier trapping; electrical conduction; microstructure; nanocrystalline porous silicon film; quantum confinement; surface oxidation; two-scale porosity; Conductive films; Electron microscopy; Etching; Fractals; Microstructure; Physics; Scanning electron microscopy; Semiconductor films; Silicon; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-5885-6
Type
conf
DOI
10.1109/SMICND.2000.890188
Filename
890188
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