Title :
Electrical properties of nanocrystalline porous silicon
Author :
Ciurea, M.L. ; Iancu, V.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest-Magurele, Romania
Abstract :
Conduction properties as well as trapping phenomena in nanocrystalline porous silicon films are investigated in relation to their microstructure. Theoretical models to describe the phenomena are proposed. The main results presented in this paper are: the two-scale porosity of our porous silicon films, the decisive role of the quantum confinement to the conduction phenomena and the prominent part played by the oxidation on the surface effects
Keywords :
electrical conductivity; elemental semiconductors; nanostructured materials; porous semiconductors; semiconductor thin films; silicon; Si; carrier trapping; electrical conduction; microstructure; nanocrystalline porous silicon film; quantum confinement; surface oxidation; two-scale porosity; Conductive films; Electron microscopy; Etching; Fractals; Microstructure; Physics; Scanning electron microscopy; Semiconductor films; Silicon; Transmission electron microscopy;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890188
