Ultra-High-Speed Low-Noise InP-HEMT Technology

Author

Shinohara, Keisuke ; Chen, Peter S. ; Bergman, Joshua ; Kazemi, Hooman ; Brar, Berinder ; Watanabe, Issei ; Matsui, Toshiaki ; Yamashita, Yoshimi ; Endoh, Akira ; Hikosaka, Kohki ; Mimura, Takashi ; Hiyamizu, Satoshi

Author_Institution

Rockwell Sci. Co. LLC, Thousand Oaks, CA

fYear

2006

fDate

11-16 June 2006

Firstpage

337

Lastpage

340

Abstract

InP-based high electron mobility transistors (InP-HEMTs) with an ultra-high current gain cutoff frequency (f^T) of over 550 GHz and a maximum oscillation frequency (f^max) of 500 GHz are realized. The excellent performance is achieved through lateral and/or vertical device scaling in combination with a reduction of parasitic resistances and capacitances. Key device technologies for ultra-high-speed, low-noise performance are described

Keywords

III-V semiconductors; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 500 GHz; InP; high electron mobility transistors; oscillation frequency; parasitic capacitances; parasitic resistances; vertical device scaling; Cutoff frequency; Degradation; Electrons; HEMTs; Laboratories; MODFETs; Noise figure; Noise measurement; Parasitic capacitance; Roentgenium; InP-HEMT; current gain cutoff frequency fT; low-noise; maximum oscillation frequency fmax; noise figure NFmin; ultra-high-speed;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249520

Filename

4014897