DocumentCode :
2709910
Title :
Ultra-High-Speed Low-Noise InP-HEMT Technology
Author :
Shinohara, Keisuke ; Chen, Peter S. ; Bergman, Joshua ; Kazemi, Hooman ; Brar, Berinder ; Watanabe, Issei ; Matsui, Toshiaki ; Yamashita, Yoshimi ; Endoh, Akira ; Hikosaka, Kohki ; Mimura, Takashi ; Hiyamizu, Satoshi
Author_Institution :
Rockwell Sci. Co. LLC, Thousand Oaks, CA
fYear :
2006
fDate :
11-16 June 2006
Firstpage :
337
Lastpage :
340
Abstract :
InP-based high electron mobility transistors (InP-HEMTs) with an ultra-high current gain cutoff frequency (fT) of over 550 GHz and a maximum oscillation frequency (fmax) of 500 GHz are realized. The excellent performance is achieved through lateral and/or vertical device scaling in combination with a reduction of parasitic resistances and capacitances. Key device technologies for ultra-high-speed, low-noise performance are described
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 500 GHz; InP; high electron mobility transistors; oscillation frequency; parasitic capacitances; parasitic resistances; vertical device scaling; Cutoff frequency; Degradation; Electrons; HEMTs; Laboratories; MODFETs; Noise figure; Noise measurement; Parasitic capacitance; Roentgenium; InP-HEMT; current gain cutoff frequency fT; low-noise; maximum oscillation frequency fmax; noise figure NFmin; ultra-high-speed;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
ISSN :
0149-645X
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2006.249520
Filename :
4014897
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2709910
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