Title :
Terahertz Multiplier Circuits
Author :
Mehdi, I. ; Chattopadhyay, G. ; Schlecht, E. ; Ward, J. ; Gill, J. ; Maiwald, F. ; Maestrini, A.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
Abstract :
Robust radiation sources in the 1-2 THz range have been sorely lacking from the repertoire of terahertz technologists and scientists. This paper reviews the progress in chip fabrication technology, based on planar GaAs Schottky diodes, that has enabled the design and fabrication of multiplier circuits working well into the terahertz range. Recent results obtained with multiplied sources in the 1-2 THz range were summarized
Keywords :
III-V semiconductors; MMIC frequency convertors; Schottky diodes; frequency multipliers; gallium arsenide; submillimetre wave circuits; 1 to 2 THz; GaAs; chip fabrication; frequency multipliers; planar Schottky diodes; radiation sources; terahertz multiplier circuits; Anodes; Chip scale packaging; Circuits; Fabrication; Frequency; Gallium arsenide; Radiofrequency identification; Robustness; Schottky diodes; Submillimeter wave technology; LO sources; Schottky diodes; Terahertz technology; frequency multipliers; heterodyne receivers; varactors;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249521
