Title :
A 150 mA LDO in 0.8 μm CMOS process
Author :
Stanescu, Cornel
Author_Institution :
Essex Com. Ltd., Bucharest, Romania
Abstract :
The paper presents a 150 mA LDO (low-dropout voltage regulator) designed in a 0.8 μm CMOS process. By using wide-band and low-current circuit techniques, high performances in terms of transient response and quiescent current are obtained with a low-ESR (Equivalent Series Resistance) load capacitor
Keywords :
CMOS analogue integrated circuits; voltage regulators; 0.8 micron; 150 mA; CMOS process; LDO; equivalent series resistance; load capacitor; low-dropout voltage regulator; quiescent current; transient response; wide-band low-current circuit; CMOS process; Driver circuits; Frequency; Intelligent networks; Operational amplifiers; Output feedback; Photonic band gap; Signal generators; Virtual reality; Voltage;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890192
