DocumentCode
2709948
Title
A 150 mA LDO in 0.8 μm CMOS process
Author
Stanescu, Cornel
Author_Institution
Essex Com. Ltd., Bucharest, Romania
Volume
1
fYear
2000
fDate
2000
Firstpage
83
Abstract
The paper presents a 150 mA LDO (low-dropout voltage regulator) designed in a 0.8 μm CMOS process. By using wide-band and low-current circuit techniques, high performances in terms of transient response and quiescent current are obtained with a low-ESR (Equivalent Series Resistance) load capacitor
Keywords
CMOS analogue integrated circuits; voltage regulators; 0.8 micron; 150 mA; CMOS process; LDO; equivalent series resistance; load capacitor; low-dropout voltage regulator; quiescent current; transient response; wide-band low-current circuit; CMOS process; Driver circuits; Frequency; Intelligent networks; Operational amplifiers; Output feedback; Photonic band gap; Signal generators; Virtual reality; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-5885-6
Type
conf
DOI
10.1109/SMICND.2000.890192
Filename
890192
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