Title :
Sub-terahertz resistive mixing in an AlGaN/GaN FET
Author :
Madjour, K. ; Ducournau, G. ; Lepilliet, S. ; Akalin, T. ; Lampin, J.F. ; Poisson, M.A. ; Delage, S. ; Gaquière, C.
Author_Institution :
Inst. d´´Electron. de Microelectron. et de Nanotechnol., Univ. de Lille 1, Villeneuve-d´´Ascq, France
Abstract :
An AlGaN/GaN based field effect transistor (FET) has been designed, fabricated, and used as a resistive mixer for heterodyne detection in the 140-220 GHz frequency range. A double VNA heterodyne measurement setup has been used in an on-wafer configuration to accurately quantify the incident radiation absorbed by the device. The appropriate selection of optimum biasing conditions for minimum conversion losses is investigated. 47.3 dB conversion losses are obtained at 150 GHz and the device linearity is confirmed.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; millimetre wave field effect transistors; submillimetre wave mixers; wide band gap semiconductors; AlGaN-GaN; FET; biasing conditions; conversion losses; device linearity; double VNA heterodyne measurement; field effect transistor; frequency 140 GHz to 220 GHz; on-wafer configuration; subterahertz resistive mixing; Aluminum gallium nitride; FETs; Gallium nitride; Linearity; Logic gates; Mixers;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612437
