Title :
A Phosphine Sub Atmospheric Delivery System (SADS) Applied to Low Pressure Chemical Vapor Deposition (LPCVD) of In-Situ Doped Polysilicon
Author :
Bowser, Jerry ; Young, William ; Chen, Lei ; Luciani, Vincent
Author_Institution :
Center for Nanoscale Sci. & Technol., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
A phosphine SADS has been fitted to a conventional LPCVD furnace system. Through careful design and implementation, we have demonstrated an inherently safe system with significantly lower infrastructure requirements and costs that meet all semiconductor industry safety requirements.
Keywords :
chemical vapour deposition; elemental semiconductors; furnaces; semiconductor thin films; silicon; LPCVD furnace system; Si; in-situ doped polysilicon; low pressure chemical vapor deposition; phosphine SADS; phosphine sub atmospheric delivery system; semiconductor industry safety requirements; Chemical vapor deposition; Electronics industry; Films; Fluid flow; Furnaces; Nanoscale devices; Safety;
Conference_Titel :
University/Government/Industry, Micro/Nano Symposium (UGIM), 2012 19th Biennial
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1751-2
Electronic_ISBN :
0749-6877
DOI :
10.1109/UGIM.2012.6247086
