Title :
Structural and optoelectrical investigation of transparent and conductive ZnO thin films prepared by chemical vapor deposition
Author :
Purica, Munizer ; Budianu, Elena ; Rusu, E. ; Danila, M. ; Gavrila, Raluca
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
Transparent and conductive ZnO thin films have been prepared by a method derived from chemical vapor deposition using Zn (C5H 7O2)2 as Zn source. The deposited thin ZnO layers of ~0,1 μm thickness on Si and InP semiconductor substrates have been investigated with respect to crystalline phase by X-ray diffraction (XRD), by AFM for surface morphology, spectrophotometric measurements in UV-VIS-NIR spectral range and optoelectrical measurements of ZnO/semiconductor heterostructures
Keywords :
II-VI semiconductors; III-V semiconductors; MOCVD coatings; X-ray diffraction; atomic force microscopy; elemental semiconductors; indium compounds; semiconductor thin films; silicon; spectrophotometry; wide band gap semiconductors; zinc compounds; 0.1 micron; AFM; X-ray diffraction; ZnO-InP; ZnO-Si; chemical vapor deposition; conductive thin films; crystalline phase; optoelectrical measurements; spectrophotometric measurements; surface morphology; transparent thin films; Chemical vapor deposition; Conductive films; Crystallization; Indium phosphide; Phase measurement; Sputtering; Substrates; Thickness measurement; X-ray diffraction; Zinc oxide;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890210
