Title :
Structure and properties of rapid thermal annealed (RTA) BaTiO3 thin films on silicon
Author :
Sundeen, J.E. ; Roseman, R.D. ; Buchanan, R.C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Cincinnati Univ., OH, USA
Abstract :
BaTiO3 thin films were rf-sputtered on Si(100) and platinized Si(100) substrates under controlled substrate temperature and ambient. Dense, single phase films with strongly preferred orientation in the film thickness range of 0.7 μm, and uniform grain sizes up to 0.25 μm were obtained under rapid thermal annealing (RTA) heat treatment in a refractory infrared furnace. Electrical measurements including dielectric, pyroelectric and photoelectric response characteristics were carried out. Flat capacitance response (εr=60) and low loss factor (D≈1-2%) was obtained over a wide frequency range of 100-100 kHz for an optimal specimen. Pyroelectric coefficients determined for the films were in the range of 10-9 C/cm2 K, but significantly strong photovoltages of >900 V/cm, on a 0.6 cm2 surface area, were generated with incandescent illumination
Keywords :
barium compounds; dielectric thin films; grain size; photovoltaic effects; pyroelectricity; rapid thermal annealing; sputtered coatings; BaTiO3; BaTiO3 thin film; RF sputtering; Si; capacitance; dielectric properties; grain size; heat treatment; photovoltage; platinized Si(100) substrate; preferred orientation; pyroelectric coefficient; rapid thermal annealing; structure; Dielectric substrates; Furnaces; Grain size; Heat treatment; Infrared heating; Optical films; Pyroelectricity; Rapid thermal annealing; Temperature control; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.598094
