Title :
Study and Modeling of the Impact of TID on the ATREE Response in LM124 Operational Amplifier
Author :
Roig, Fabien ; Dusseau, L. ; Ribeiro, P. ; Auriel, G. ; Roche, Nicholas J.-H ; Privat, A. ; VailleÌ, J.-R. ; Boch, J. ; SaigneÌ, FreÌdeÌric ; Marec, R. ; Calvel, P. ; Bezerra, F. ; Ecoffet, R. ; Azais, Bruno
Author_Institution :
Commissariat a l´Energie Atomique et aux Energies Alternatives, Gramat, France
Abstract :
Shapes of ATREEs (Analog Transient Radiation Effects on Electronics) in a bipolar integrated circuit change with exposure to Total Ionizing Dose (TID) radiation. The impact of TID on ATREEs is investigated in the LM124 operational amplifier (opamp) from three different manufacturers. Significant variations are observed on the ATREE responsesfrom different manufacturers. The ATREEs are produced by pulsed X-ray experiments. ASET laser mappings are performed to highlight the sensitive bipolar transistors, explaining the ATREE phenomena variations from one manufacturer to another one. ATREE modeling results are presented using a previously developed simulation tool. A good agreement is observed between experimental ATREE responses and model outputs whatever the TID level, the prompt dose level, the amplifier configuration and the device manufacturer.
Keywords :
bipolar transistors; ionisation; laser beam applications; operational amplifiers; radiation hardening (electronics); ASET laser mapping; ATREE; LM124 operational amplifier; TID radiation; analog transient radiation effects on electronics; bipolar integrated circuit; opamp; pulsed X-ray experiment; total ionizing dose radiation; Bipolar transistors; Integrated circuit modeling; Performance evaluation; Radiation effects; Sensitivity; Transient analysis; Transistors; Bipolar analog integrated circuits; X-ray effects; circuit modeling; ionizing dose; single event transient; transient radiation effects; transient response;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2306211
