Free carrier lifetime reduction in silicon by electron-beam irradiation

Author

Codreanu, Cecilia ; Vasile, E. ; Iliescu, Elena ; Avram, Marioara ; Badoiu, A. ; Ravariu, C.

Author_Institution

Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania

Volume

1

fYear

2000

fDate

2000

Firstpage

255

Abstract

Point defects induced by electron-beam irradiation introduce new recombination centers in the band-gap determining the free carrier lifetime reduction. This effect is successfully used in reduction the switching time of semiconductor devices. Our work presents a model for the free carrier lifetime in silicon that takes into account the influence of concentration and energy level of the recombination centers induced by electron-beam irradiation. The irradiation was made on silicon diodes in a 7 MeV accelerator, in different does and temperature conditions. The simulation procedure consists in modeling the primary defect generation and rescaling the primary defect profile as a function of irradiation temperature. Then carrier lifetime is deduced by using the Shockley-Read-Hall statistics and an experimental database

Keywords

carrier lifetime; electron beam effects; electron-hole recombination; elemental semiconductors; point defects; power semiconductor diodes; silicon; 7 MeV; Shockley-Read-Hall statistics; Si; electron beam irradiation; free carrier lifetime; gap state; point defect; recombination center; semiconductor device; silicon power diode; switching time; Charge carrier lifetime; Energy states; Photonic band gap; Radiative recombination; Semiconductor devices; Semiconductor diodes; Silicon; Spontaneous emission; Statistics; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2000. CAS 2000 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-5885-6

Type

conf

DOI

10.1109/SMICND.2000.890230

Filename

890230