Title :
Modeling the charge injection process in acoustic charge transport devices
Author :
Knapp, S.M. ; Liou, J.J. ; Malocha, D.C.
Author_Institution :
Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
Abstract :
A method for modeling the charge injection process in monolithic acoustic charge transport (ACT) devices on GaAs has been developed. The method uses solutions of the two-dimensional Poisson equation to obtain the potential and charge distributions in the charge-injection region of an ACT device. The model predicts dependence of injected packet size and overall delay on the input bias. It has been left flexible to allow variations in all simulation parameters, including SAW (surface acoustic wave) wavelength, surface-metallization structure, and nonconstant epilayer doping, in order to investigate their effects on the charge injection process. Derivation of the method and results of simulations are presented
Keywords :
III-V semiconductors; acoustoelectric devices; gallium arsenide; surface acoustic wave devices; ACT device; GaAs; SAW wavelength; charge distributions; charge injection process modelling; epilayer doping; monolithic acoustic charge transport device; packet size; potential distribution; semiconductor; simulation parameters; surface acoustic wave; surface-metallization structure; two-dimensional Poisson equation; Acoustic devices; Acoustic waves; Delay; Doping; Gallium arsenide; Poisson equations; Predictive models; Semiconductor process modeling; Surface acoustic wave devices; Surface acoustic waves;
Conference_Titel :
Ultrasonics Symposium, 1989. Proceedings., IEEE 1989
Conference_Location :
Montreal, Que.
DOI :
10.1109/ULTSYM.1989.66986
