Title :
Nonlinear capacitors integration
Author :
Hakim, Hedi ; Laur, Jean-Pierre ; Sanchez, Jean-Louis ; Scheid, Emmanuel ; Dubreuil, Pascal
Author_Institution :
LAAS-CNRS, Toulouse, France
Abstract :
Silicon reactive ionic etching (RIE) offers an interesting solution for nonlinear capacitors integration in the field of power electronics applications. In this paper we study more particularly the behavior of trench topology, combining MOS and bipolar effects. The influence of the geometrical parameters on the C-V characteristic of the device will be analyzed thanks to 2D simulations carried out using ATLAS software. We also suggest a suitable peripheral termination for deep trench devices in order to increase the breakdown voltage capability. Finally we present the main process steps of the first prototypes fabrication as well as the C-V electrical characterization results
Keywords :
power capacitors; sputter etching; 2D simulation; ATLAS software; C-V characteristics; Si; breakdown voltage; deep trench device; nonlinear capacitor; peripheral termination; power electronics; reactive ionic etching; silicon integration; Analytical models; Application software; Capacitance-voltage characteristics; Circuit topology; Etching; MOS capacitors; Power electronics; Silicon; Software prototyping; Solid modeling;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890240
