• DocumentCode
    2710675
  • Title

    An Ultra Low-Power (⩽13.6 mW/latch) Static Frequency Divider in an InP/InGaAs DHBT Technology

  • Author

    Griffith, Zach ; Parthasarathy, Navin ; Rodwell, Mark J.W. ; Urteaga, Miguel ; Shinohara, Keisuke ; Rowell, Petra ; Pierson, Richard ; Brar, Bobby

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
  • fYear
    2006
  • fDate
    11-16 June 2006
  • Firstpage
    506
  • Lastpage
    509
  • Abstract
    An ultra-low power static frequency divider with a maximum clock frequency > 61 GHz was designed and fabricated into a 500 nm InP/In 0.53Ga47As/InP double heterojunction bipolar transistor (DHBT) technology utilizing a collector pedestal process for reduced base-collector capacitance Ccb. This is the first reported digital circuit in this material system employing such Ccb reduction techniques. The divider operation is fully static, operating from fclk = 4 GHz to 61.2 GHz while dissipating 27.1 mW of power in the flip-flop from a single -2.30 V supply. The power-delay product of this circuit is 113.0 fJ/latch if all devices in the latch are considered and 63.2 fJ/latch if the power associated with the voltage level-shifting emitter followers is not included in the power-delay calculation. By either method of calculation, this is a record low power-delay product for an InP DHBT-based static frequency divider; more than 2times lower than has been previously reported. The circuit employs the current mode logic (CML) topology and inductive peaking
  • Keywords
    III-V semiconductors; bipolar integrated circuits; current-mode logic; flip-flops; frequency dividers; gallium arsenide; indium compounds; low-power electronics; microwave power amplifiers; -2.30 V; 27.1 mW; 4 to 61.2 GHz; 500 nm; DHBT technology; InP-In0.53Ga47As-InP; base-collector capacitance; collector pedestal process; current mode logic topology; digital circuit; double heterojunction bipolar transistor technology; flip-flop; static frequency divider; ultra low-power frequency divider; voltage level-shifting emitter followers; Capacitance; Clocks; DH-HEMTs; Digital circuits; Double heterojunction bipolar transistors; Flip-flops; Frequency conversion; Indium gallium arsenide; Indium phosphide; Latches; InP heterojunction bipolar transistor; Static frequency divider;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2006. IEEE MTT-S International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-9541-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2006.249621
  • Filename
    4014945