Title :
Influence of the N+ floating emitter on the on-state characteristics of the Trench EST
Author :
Spulber, O. ; Sweet, M. ; Vershinin, K. ; Ngw, Yeo ; Ngwendson, L. ; Bose, S.C. ; De Souza, M.M. ; Narayanan, E. M Sankara
Author_Institution :
Emerging Technol. Res. Center, De Montfort Univ., Leicester, UK
Abstract :
In this paper, the influence of the N+ floating emitter dimensions and doping on the on-state voltage drop and forward-biased safe operating area of the Trench EST are analysed in detail. The influence of the N+ floating emitter doping is demonstrated for the first time. Moreover, we propose to reduce the doping of this region in order to increase the FBSOA of the Trench EST
Keywords :
MOS-controlled thyristors; N+ floating emitter; Trench EST; forward-biased safe operating area; on-state voltage drop; Anodes; Breakdown voltage; Cathodes; Circuit testing; Displays; Doping; Insulated gate bipolar transistors; Latches; Low voltage; Thyristors;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890247
