DocumentCode
2710724
Title
Influence of the N+ floating emitter on the on-state characteristics of the Trench EST
Author
Spulber, O. ; Sweet, M. ; Vershinin, K. ; Ngw, Yeo ; Ngwendson, L. ; Bose, S.C. ; De Souza, M.M. ; Narayanan, E. M Sankara
Author_Institution
Emerging Technol. Res. Center, De Montfort Univ., Leicester, UK
Volume
1
fYear
2000
fDate
2000
Firstpage
329
Abstract
In this paper, the influence of the N+ floating emitter dimensions and doping on the on-state voltage drop and forward-biased safe operating area of the Trench EST are analysed in detail. The influence of the N+ floating emitter doping is demonstrated for the first time. Moreover, we propose to reduce the doping of this region in order to increase the FBSOA of the Trench EST
Keywords
MOS-controlled thyristors; N+ floating emitter; Trench EST; forward-biased safe operating area; on-state voltage drop; Anodes; Breakdown voltage; Cathodes; Circuit testing; Displays; Doping; Insulated gate bipolar transistors; Latches; Low voltage; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-5885-6
Type
conf
DOI
10.1109/SMICND.2000.890247
Filename
890247
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