Title :
Si as an emissive optical medium for the 3–12 μm band
Author :
Malyutenko, V.K.
Author_Institution :
Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
The conventional methods of utilizing Si as a light-emitting medium are limited to the near-infrared band (λ<;2 μm). Here we summarize our recent studies in silicon structures that efficiently and controllably emit radiation in the 3-12 μm band, including a novel device design and concepts for LEDs, dynamic scene simulation devices, optical amplifiers, and radiative coolers.
Keywords :
elemental semiconductors; infrared sources; light emitting diodes; optical design techniques; semiconductor optical amplifiers; silicon; LED; Si; device design; dynamic scene simulation devices; emit radiation; near-infrared sources; optical amplifiers; optical light-emitting medium; radiative coolers; silicon structures; wavelength 3 mum to 12 mum; Light emitting diodes; Optical amplifiers; Optical pumping; Photonics; Silicon; Stimulated emission;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612486
