DocumentCode :
2710916
Title :
A Linearity Improvement Technique for Thin-film Barium Strontium Titanate Capacitors
Author :
Fu, Jia-Shiang ; Zhu, Xinen Alfred ; Chen, Ding-Yuan ; Phillips, Jamie D. ; Mortazawi, Amir
Author_Institution :
Michigan Univ., Ann Arbor, MI
fYear :
2006
fDate :
11-16 June 2006
Firstpage :
560
Lastpage :
563
Abstract :
A device architecture is proposed to improve the linearity of barium strontium titanate (BST) capacitors while maintaining the tunability and the quality factor. Thin-film parallel plate capacitors are fabricated utilizing the proposed architecture. The measurement results successfully demonstrate the effectiveness of this approach. Up to 14 dB of improvement on IIP3 is observed
Keywords :
Q-factor; barium compounds; strontium compounds; thin film capacitors; tuning; intermodulation distortion; linearity improvement technique; parallel plate capacitors; quality factor; thin-film barium strontium titanate capacitors; tunable capacitor; Barium; Binary search trees; Capacitors; Electrodes; Ferroelectric materials; Linearity; Strontium; Titanium compounds; Transistors; Voltage; Barium strontium titanate (BST); ferroelectric; intermodulation distortion; linearity; tunable capacitor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
ISSN :
0149-645X
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2006.249654
Filename :
4014960
Link To Document :
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