Optical Properties of ZnO Thin Films Prepared by Oxidation of Granulated Zn

Author

Chuah, L.S. ; Hassan, Z. ; Tneh, S.S.

Author_Institution

Sch. of Distance Educ., Univ. Sains Malaysia, Minden, Malaysia

fYear

2010

fDate

7-10 May 2010

Firstpage

602

Lastpage

604

Abstract

The thermal evaporation technique was used to deposit the zinc (Zn) films on Si(111) substrates. ZnO thin films were obtained in an inexpensive and simple way by thermally oxidizing granulated Zn films at 900°C in air for 1 hour without any catalyst. ZnO thin films have a hexagonal wurtzite structure. The structural and optical characteristics of ZnO thin films samples were investigated by scanning electron microscopy (SEM) and photoluminescence (PL). PL measurements revealed that the near band edge peak of ZnO samples was blue shifted.

Keywords

II-VI semiconductors; evaporation; optical properties; oxidation; photoluminescence; scanning electron microscopy; semiconductor thin films; silicon; spectral line shift; substrates; wide band gap semiconductors; zinc compounds; SEM; Si(111) substrates; ZnO; blue shift; granulated zinc; hexagonal wurtzite structure; optical properties; photoluminescence; scanning electron microscopy; temperature 900 degC; thermal evaporation; thermal oxidation; thin films; time 1 hour; Lattices; Optical films; Optical mixing; Optical sensors; Oxidation; Physics; Semiconductor thin films; Substrates; Transistors; Zinc oxide; Si(111); ZnO; thermal evaporation;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Research and Development, 2010 Second International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-0-7695-4043-6

Type

conf

DOI

10.1109/ICCRD.2010.127

Filename

5489571