DocumentCode :
2711149
Title :
Characterization of semiconductor materials as terahertz emitters under the effect of in-plane magnetic field
Author :
Radhanpura, K. ; Lewis, R.A.
Author_Institution :
Inst. for Supercond. & Electron. Mater., Univ. of Wollongong, Wollongong, NSW, Australia
fYear :
2010
fDate :
5-10 Sept. 2010
Firstpage :
1
Lastpage :
2
Abstract :
The effect of magnetic field on emitted terahertz radiation is useful for determination of the mechanism involved in THz generation. Semiconductor materials, which are potential sources of terahertz radiation, have been analyzed under the influence of in-plane magnetic field.
Keywords :
microwave materials; terahertz wave generation; terahertz wave spectra; inplane magnetic field; semiconductor material characterization; terahertz emitter; terahertz generation; Crystals; Delay effects; Indium phosphide; Magnetic domains; Magnetic field measurement; Magnetic fields; Optical surface waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
Type :
conf
DOI :
10.1109/ICIMW.2010.5612502
Filename :
5612502
Link To Document :
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