Crystal growth of BaTiO3 by the TSSG method and its thermal poling

BaTiO₃ single crystals were grown by using the TSSG technique. The seeding process was the most important point in the growth. The dielectric constant was resonant at the cubic-tetragonal transition at T_c=131°C. A thermal poling process was developed in this work. Samples with two parallel or one polished surfaces (±c) were heated to 1100°C, held for 3 hours and then cooled to room temperature. After the thermal poling, an electrical field of about 1 kV/cm was applied along the c direction at a temperature near Tc for 10 hours in order to obtain single-domain BaTiO ₃ crystals