Title :
An In0.23Ga0.77As-based pHEMT-like planar Gunn diode operating at 116 GHz
Author :
Li, Chong ; Khalid, A. ; Lok, L.B. ; Pilgrim, N.J. ; Holland, M.C. ; Dunn, G.M. ; Cumming, D.R.S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
An In0.23Ga0.77As-based planar Gunn diode operating in its fundamental transit-time mode of oscillation at 116 GHz with output power of -24 dBm is demonstrated. The diode has a pseudomorhpic HEMT-like structure grown on a semi-insulating GaAs substrate. The layer design was carried out using a two-dimensional drift-diffusion model. The realized devices show considerable potential as a source of millimeter-wave and even terahertz radiation.
Keywords :
Gunn diodes; high electron mobility transistors; oscillations; In0.23Ga0.77As; frequency 116 GHz; layer design; millimeter-wave radiation; oscillation; planar Gunn diode; pseudomorhpic HEMT-like structure; semi-insulating GaAs substrate; terahertz radiation; two-dimensional drift-diffusion model; Current measurement; Electrical resistance measurement; Gallium arsenide; Oscillators; Semiconductor device measurement; Semiconductor process modeling; Substrates;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612507
