A Nonlinear Drain Resistance Model for a High Power Millimeter-wave PHEMT

Author

Inoue, Akira ; Amasuga, Hirotaka ; Goto, Seiki ; Kun, Tetsuo ; Wong, Melinda F. ; Alamo, Jesus A del ; Oku, Tomoki ; Ishikawa, Takahide

Author_Institution

High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Itami

fYear

2006

fDate

11-16 June 2006

Firstpage

647

Lastpage

650

Abstract

A millimeter wave high power PHEMT model with a nonlinear drain resistance Rd is proposed. The nonlinear Rd arises from electron velocity saturation in the gate-drain gap. At 2.1 GHz, the nonlinear Rd behaves like a conventional linear resistor. However, at Ka band, the nonlinearity of the resistance results in a large power loss. This frequency dependent phenomenon has been experimentally verified in millimeter-wave GaAs PHEMTs. Our proposed simple model accurately describes the power characteristics of these devices at 2.1 GHz and in Ka band

Keywords

UHF field effect transistors; high electron mobility transistors; millimetre wave field effect transistors; semiconductor device models; 2.1 GHz; GaAs; Ka band; electron velocity saturation; gate drain gap; high power PHEMT; linear resistor; millimeter wave PHEMT; nonlinear drain resistance model; power loss; resistance nonlinearity; Electric resistance; Electrons; Frequency dependence; Gallium arsenide; Millimeter wave technology; Millimeter wave transistors; Optical amplifiers; PHEMTs; Power amplifiers; Solid modeling; FETs; Millimeter wave amplifiers; Modeling; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249697

Filename

4014985