Title :
Large-Signal Modeling of High-Speed InP DHBTs using Electromagnetic Simulation Based De-embedding
Author :
Johansen, T.K. ; Krozer, V. ; Konczykowska, Agnieszka ; Riet, M. ; Vidkjær, J.
Author_Institution :
Sect. of Electromagn. Syst., Denmark Tech. Univ., Oersted
Abstract :
We report on a consistent large-signal and small-signal modeling and parameter extraction method for high-speed InP DHBT valid to 110 GHz. Electromagnetic simulation is applied to predict the embedded network model caused by pad parasitics. Applying direct parameter extraction on the de-embedded device response leads to accurate small-signal model description of the InP DHBT. We have solved the problem of consistent transit time modeling by a two step process. A parameter extraction approach is described for the Agilent ADS2004A HBT model, which assures consistency between large-signal and bias-dependent small-signal modeling
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device models; 110 GHz; Agilent ADS2004A HBT model; DHBT; InP; de-embedded device response; electromagnetic simulation; embedded network model; heterojunction bipolar transistor; large-signal modeling; millimeter wave bipolar transistors; millimeter wave measurements; pad parasitics; parameter extraction method; small-signal modeling; transit time modeling; Capacitance; Circuit simulation; Double heterojunction bipolar transistors; Electromagnetic modeling; Heterojunction bipolar transistors; Indium phosphide; Millimeter wave measurements; Millimeter wave technology; Parameter extraction; Shunt (electrical); Heterojunction bipolar transistor; Millimeter wave bipolar transistors; Millimeter wave measurements;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249699
