A Non-Linear Noise Model of Bipolar Transistors for the Phase-Noise Performance Analysis of Microwave Oscillators

Author

Florian, Corrado ; Traverso, Pier Andrea ; Borgarino, Mattia ; Filicori, Fabio

Author_Institution

Dept. of Electron. Comput. Sci. & Syst., Bologna Univ.

fYear

2006

fDate

11-16 June 2006

Firstpage

659

Lastpage

662

Abstract

An empirical nonlinear noise model for bipolar transistors, deriving from the charge-controlled nonlinear noise (CCNN) modelling approach, has been developed and implemented. The noise model of a GaInP-GaAs HBT device has been experimentally characterized on the basis of both bias-dependent low-frequency noise data and a set of phase-noise measurements. To this aim, a special-purpose laboratory set-up has been implemented, which allows for phase-noise measurements on an on-wafer device sample under a wide set of different large-signal oscillating conditions. Good agreement was found between the predicted performance and the phase-noise measurements carried out on a MMIC VCO designed by using the proposed non-linear noise model

Keywords

III-V semiconductors; MMIC oscillators; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; phase noise; semiconductor device models; semiconductor device noise; voltage-controlled oscillators; GaInP-GaAs; HBT device; MMIC VCO; bipolar transistors; charge-controlled nonlinear noise modelling; microwave oscillators; nonlinear noise model; on-wafer device sample; performance analysis; phase noise measurements; Bipolar transistors; Gain measurement; Heterojunction bipolar transistors; Low-frequency noise; Microwave devices; Microwave oscillators; Noise measurement; Performance analysis; Phase measurement; Phase noise; Low phase-noise; Low-frequency noise; Microwave Oscillator; Noise up-conversion; Non-linear noise model;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249700

Filename

4014988