Title :
Terahertz emission from GaN epilayers at lateral electric field
Author :
Shalygin, V.A. ; Vorobjev, L.E. ; Firsov, D.A. ; Panevin, V. Yu ; Sofronov, A.N. ; Melentyev, G.A. ; Antonov, A.V. ; Gavrilenko, V.I. ; Suihkonen, S. ; Törma, P.T. ; Ali, Mohamed ; Lipsanen, H.
Author_Institution :
St. Petersburg State Polytech. Univ., St. Petersburg, Russia
Abstract :
Emission of terahertz radiation from GaN has been observed at electric field exceeding impurity breakdown threshold. Distinctive features of the emission spectra can be assigned to electron transitions between excited and ground states of donors and to hot electron transitions to the donor states.
Keywords :
III-V semiconductors; electric field effects; electroluminescence; excited states; gallium compounds; hot carriers; semiconductor epitaxial layers; wide band gap semiconductors; GaN; GaN epilayers; donor states; emission spectra; excited states; ground states; hot electron transitions; impurity breakdown threshold; lateral electric field; terahertz emission; terahertz radiation; Electric breakdown; Electric fields; Electroluminescence; Gallium nitride; Impurities; Photoconductivity; Silicon;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612519
