DocumentCode :
2711411
Title :
Mechanisms of electromigration under AC and pulsed-DC stress in Cu/low-k dual damascene interconnects
Author :
Lin, M.H. ; Oates, A.S.
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
fYear :
2015
fDate :
19-23 April 2015
Abstract :
We examine electromigration mass transport under pulsed-DC (PDC) and AC conditions by measuring the Cu drift velocity. We observed drift velocities that are constant as a function of duty ratio, confirm that there is no recovery of electromigration damage during current reversal, or off-cycles. Failure time distributions under PDC conditions can be accurately modeled by a void growth mechanism with an effective current density given by the average of the waveform.
Keywords :
copper; current density; electromigration; failure analysis; integrated circuit interconnections; AC electromigration; Cu; copper-low-k dual damascene interconnects; current density; electromigration mass transport; failure time distributions; pulsed-DC stress; Current density; Data models; Electromigration; Electron mobility; Mathematical model; Resistance; Stress; AC Elecromigration; Copper; low-k; pulse DC;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/IRPS.2015.7112681
Filename :
7112681
Link To Document :
بازگشت