Title :
Large area silicon position sensitive photo-detector: fabrication and characterization
Author :
Hamoudi, Walid K. ; Ismail, Raid A. ; Habib, Husam H.
Abstract :
In the present work, fabrication and characterization of a silicon position sensitive photo-detector PSD (diffused junction) is given. These detectors are good candidate for the use in laser tracking system and in displacement measurement applications. The responsivity, detectivity and rise time of these detectors at the near infrared region (750- 1080) nm were measured and discussed.
Keywords :
displacement measurement; electro-optical devices; elemental semiconductors; infrared detectors; optical fabrication; optical sensors; optical tracking; photodetectors; semiconductor device testing; semiconductor junctions; silicon; 750 to 1080 nm; Si; detectors responsivity; detectors rise time; diffused junction; displacement measurement applications; electro-optical properties; laser tracking system; photo-detector characterization; photo-detector fabrication; silicon position sensitive photo-detector; Conductivity; Fabrication; Impurities; Infrared detectors; Oxidation; Photodiodes; Position measurement; Shape measurement; Silicon; Temperature;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2005. Proceedings of CAOL 2005. Second International Conference on
Print_ISBN :
0-7803-9130-6
DOI :
10.1109/CAOL.2005.1553838
