Optimum Combination of SiC-diodes and Si-switching Devices in High Power Application

In this paper, several combinations of silicon carbide diodes and silicon switching devices are evaluated using device simulation. The 1.2kV and 3.3kV SiC-PiN diode, SiC-SBD, Si-PiN diode, Si-IGBT and Si-IEGT are used. The devices structures in device simulation are determined by comparing static and switching characteristics to those in the experiment. Moreover it is confirmed that the total devices switching loss in device simulation is appropriate by comparing it with experimental results. In device simulation, six combinations are evaluated under 1200 DC voltage and two temperature conditions. As the simulation results, we present optimum combination of silicon carbide diodes and silicon switching devices from the viewpoint of devices loss in the switching frequency of several kHz.