Systematical study of 14nm FinFET reliability: From device level stress to product HTOL

Author

Changze Liu ; Hyun-Chul Sagong ; Hyejin Kim ; Seungjin Choo ; Hyunwoo Lee ; Yoohwan Kim ; Hyunjin Kim ; Bisung Jo ; Minjung Jin ; Jinjoo Kim ; Sangsu Ha ; Sangwoo Pae ; Jongwoo Park

Author_Institution

Syst. LSI Div., Samsung Electron., Yongin, South Korea

fYear

2015

fDate

19-23 April 2015

Abstract

In this paper, fundamental reliability findings in 14nm bulk FinFET technology, are systematically investigated. From device and Ring Oscillator stress to product-level HTOL results, we show that BTI on (110) Fin can be improved significantly with optimized process. In addition, BTI variability with small Fins does not pose any fundamental risk and we´ll show 1000hrs of HTOL data on 128Mb SRAM. Fin Self-heating effect (SHE) was characterized for both logic and I/O devices and verified through simulations and thermal imaging for product design and verifications. Overall, robust 14nm FinFET reliability has been demonstrated on the product level through full process optimizations and stress validations.

Keywords

MOSFET; semiconductor device reliability; BTI variability; FinFET technology reliability; I-O device; SRAM; device level stress; fin SHE; fin self-heating effect; logic device; product design; product verification; product-level HTOL result; ring oscillator stress; size 14 nm; stress validation; thermal imaging; time 1000 hr; FinFETs; Logic gates; Random access memory; Reliability; Stress; 14nm FinFET; BTI; HTOL; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2015 IEEE International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/IRPS.2015.7112693

Filename

7112693