DocumentCode :
2711636
Title :
Thermal Modelling of IGBT Devices
Author :
Trigkidis, G. ; Bousbaine, A. ; Thorn, R.
Author_Institution :
Derby Univ.
Volume :
2
fYear :
2006
fDate :
6-8 Sept. 2006
Firstpage :
584
Lastpage :
588
Abstract :
Electro-thermal and thermo mechanical effects are becoming more and more important in power electronic systems as industry seeks to decrease packaging and increase power densities. Therefore the demand for faster and more accurate thermal models is increasing. This paper proposes an improved electro-thermal IGBT model based on a lumped parameter modelling method. The model was developed using MATLAB software (Trigkidis, G, et al., 2002). The electrical model based on Hefners´ IGBT model is further improved using a multi-dimensional model for accurate loss density computation. The development of the thermal model will be presented and the simulated results will be compared with experimental results to corroborate the developed model
Keywords :
insulated gate bipolar transistors; lumped parameter networks; mathematics computing; power electronics; semiconductor device models; thermal analysis; Hefners´ model; IGBT devices; MATLAB software; electrical model; electro-thermal effects; lumped parameter modelling; multidimensional model; power densities; power electronic systems; thermal modelling; thermo mechanical effects; Electronic packaging thermal management; Insulated gate bipolar transistors; Mathematical model; Power system modeling; Predictive models; Resistance heating; Slabs; Temperature distribution; Thermal conductivity; Thermal resistance; IGBT; lumped parameter; thermal modelling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Universities Power Engineering Conference, 2006. UPEC '06. Proceedings of the 41st International
Conference_Location :
Newcastle-upon-Tyne
Print_ISBN :
978-186135-342-9
Type :
conf
DOI :
10.1109/UPEC.2006.367545
Filename :
4218752
Link To Document :
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