Title :
Performance and RF Reliability of GaN-on-SiC HEMT´s using Dual-Gate Architectures
Author :
Vetury, R. ; Shealy, J.B. ; Green, D.S. ; McKenna, J. ; Brown, J.D. ; Gibb, S.R. ; Leverich, K. ; Garber, P.M. ; Poulton, M.J.
Author_Institution :
RF Micro Devices, Charlotte, NC
Abstract :
AlGaN/GaN HEMTs on SiC have been fabricated with dual and single gate device geometries. Subthreshold characteristics and drain bias dependence of large signal parameters were compared to identify differences in electric field. Degradation under RF stress reveals the relative impact of temperature and electric field. The results illustrate the beneficial effects of the dual gate geometry for performance and reliability
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor device reliability; stress analysis; stress effects; wide band gap semiconductors; AlGaN-GaN; HEMT; RF reliability; cascode; dual gate device geometry; dual-gate architectures; single gate device geometry; Aluminum gallium nitride; Degradation; Gallium nitride; Geometry; HEMTs; MODFETs; Radio frequency; Radiofrequency identification; Signal processing; Silicon carbide; Cascode; Dual Gate; GaN; HEMT; SiC;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249733
