Title :
NBTI in Si0.5Ge0.5 RMG gate stacks — Effect of high-k nitridation
Author :
Srinivasan, P. ; Fronheiser, J. ; Siddiqui, S. ; Kerber, A. ; Edge, L.F. ; Southwick, R.G. ; Cartier, E.
Author_Institution :
GLOBALFOUNDRIES, Malta, NY, USA
Abstract :
Negative Bias Temperature Instability (NBTI) is assessed in (100)Si planar cSi0.5Ge0.5 Replacement Metal Gate (RMG) gate stacks, with and without high-k nitridation for various post nitridation anneal (PNA) conditions. Observed initial Nit was 8~9×1011 cm-2. Nitrided devices show higher NBTI than non-nitrided devices. Observed time slopes become shallower from ~0.25 to ~0.20. Overall, observed NBTI in cSi0.5Ge0.5 stacks are promising making it viable for use in 7nm and below nodes.
Keywords :
Ge-Si alloys; annealing; field effect transistors; negative bias temperature instability; nitridation; semiconductor materials; NBTI; RMG gate stacks; Si0.5Ge0.5; high-k nitridation; negative bias temperature instability; post nitridation anneal conditions; replacement metal gate gate stacks; Annealing; Degradation; Delays; Logic gates; Stress; Transient analysis; Voltage measurement; FEOL; NBTI; SiGe; gate stack; interface state density; nitridation; reliability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112695
