Title :
A 45% Drain Efficiency, -50dBc ACLR GaN HEMT Class-E Amplifier with DPD for W-CDMA Base Station
Author :
Ui, Norihiko ; Sano, Seigo
Author_Institution :
Eudyna Devices Inc., Yamanashi
Abstract :
A 10W GaN HEMT class-E amplifier for W-CDMA base station is demonstrated in this paper. We first demonstrate that a low pass type class-E circuit has quite similar performance to widely used series L-C resonance class-E circuit by simulating voltage and current waveforms with 50V operation GaN HEMT at 2.1GHz. We achieved measurement results; drain efficiency of 82%, CW output power of 11W and linear gain of 19.5dB at 2.1GHz and 50V drain bias operation with a simple low pass class-E circuit. And ACLR of -50dBc was obtained with 45% drain efficiency under 2-carrier W-CDMA , 7.8dB PAR (0.01%) signals, by using digital pre-distortion (DPD) operation
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; code division multiple access; gallium compounds; wide band gap semiconductors; 10 W; 19.5 dB; 2.1 GHz; 50 V; DPD; GaN; HEMT; W-CDMA base station; class-E amplifier; digital pre-distortion; low pass type class-E circuit; microwave frequency; Base stations; Circuit simulation; Gain measurement; Gallium nitride; HEMTs; Multiaccess communication; Power measurement; RLC circuits; Resonance; Voltage; Class-E operation; GaN HEMT; digital pre-distortion(DPD); microwave frequency;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249734
