Title :
Time-resolved terahertz spectroscopy of black silicon
Author :
Porte, H.P. ; Turchinovich, D. ; Jepsen, P. Uhd ; Persheyev, S. ; Fan, Y. ; Rose, M.J.
Author_Institution :
Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby, Denmark
Abstract :
The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.
Keywords :
elemental semiconductors; laser beam annealing; photoconductivity; silicon; terahertz spectroscopy; Si:H; annealing method; black silicon; decay time; laser annealing; production process; time-resolved terahertz spectroscopy; ultrafast photoconductivity dynamics; Annealing; Laser beams; Optical films; Optical pumping; Photoconductivity; Silicon;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612535
