Title :
A 500W Push-Pull AlGaN/GaN HEMT Amplifier for L-Band High Power Application
Author :
Maekawa, Arata ; Yamamoto, Takashi ; Mitani, Eizo ; Sano, Seigo
Author_Institution :
Eudyna Devices Inc., Yamanashi
Abstract :
We have successfully developed a 500W AlGaN/GaN HEMT power amplifier with a frequency of 1.5GHz in L-Band, operating at 65V drain bias voltage. This amplifier consists of 4-chips of HEMT die developed for L-band frequency operation with push-pull configuration. The developed amplifier has an output power of 500W and a high linear gain of 17.8dB at the frequency of 1.5GHz under pulsed conditions at a duty of 10% with a pulse width of 100musec. To the best of our knowledge, this is the highest power ever reported for L-band GaN-related amplifier
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; aluminium compounds; gallium compounds; power integrated circuits; wide band gap semiconductors; 1.5 GHz; 17.8 dB; 500 W; 65 V; AlGaN-GaN; HEMT amplifier; L-band; high power application; power amplifier; push-pull amplifier; Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; High power amplifiers; L-band; Power amplifiers; Pulse amplifiers; Space vector pulse width modulation; Voltage; HEMT; High Power; Power amplifier;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249735
